cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 1/8 BTB5240N3 cystek product specification low v ce(sat) pnp epitaxial planar transistor bv ceo -40v i c -2a r cesat(typ.) 0.106 BTB5240N3 features ? excellent dc current gain characteristics ? low saturation voltage v ce(sat) =-0.18v(typ)(i c =-2a, i b =-200ma). ? pb-free lead plating and halogen-free package symbol outline BTB5240N3 sot-23 b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -7 v collector current(dc) i c -2 collector current(pulsed)( note 1) i cp -3 a 300 (note 2) power dissipation p d 480 (note 3) mw 417 thermal resistance, junction to ambient r ja 260 c/w operating junction temperature range tj -65~+150 c storage temperature range tstg -65~+150 c note 1: single pulse, pw 10ms, duty cycle 30%. 2. device mounted on a fr-4 board of 2 oz, single sided copper, with area of minimum pad size. 3. device mounted on a fr-4 board of 2 oz, single sided copper, with area of 1 cm2.
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 2/8 BTB5240N3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -40 - - v i c =-50 a bv ceo -40 - - v i c =-1ma bv ebo -7 - - v i e =-50 a i cbo - - -100 na v cb =-40v i ebo - - -100 na v eb =-5v *v ce(sat) 1 - -53 -80 mv i c =-100ma, i b =-1ma *v ce(sat) 2 - -53 -80 mv i c =-500ma, i b =-50ma *v ce(sat) 3 - -105 -160 mv i c =-750ma, i b =-15ma *v ce(sat) 4 - -106 -160 mv i c =-1a, i b =-50ma *v ce(sat) 5 - -180 -230 mv i c =-2a, i b =-200ma *r cesat - 106 160 m i c =-500ma, i b =-50ma *v be(sat) - -0.96 -1.1 v i c =-2a, i b =-200ma *v be(on) - -0.65 -0.75 v v ce =-2v, i c =-100ma *h fe 1 300 - 600 - v ce =-2v, i c =-100ma *h fe 2 260 - - - v ce =-2v, i c =-500ma *h fe 3 210 - - - v ce =-2v, i c =-1a *h fe 4 100 - - - v ce =-2v, i c =-2a f t 100 190 - mhz v ce =-10v, i c =-100ma, f=100mhz cob - 26 - pf v cb =-10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping BTB5240N3-0-t1-g sot-23 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 3/8 BTB5240N3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 200ua 300ua 400ua 500ua 1ma -ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 1.5ma 2ma 2.5ma 5ma -ib=500ua emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 4ma 6ma 8ma 20ma -ib=2ma emitter grounded output characteristics 0 1 2 3 4 5 6 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 10ma 25ma 50ma -ib=5ma current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta= 75c ta= 25c ta=0c ta=-40c vce=-1v current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-2v
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 4/8 BTB5240N3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=20ib saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=50ib saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=100ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 -ic, collector currentma) saturation voltage---(mv) vbesat@ic=10ib ta=-40c ta=0c ta=25c ta=75c ta=125c on voltage vs collector current 100 1000 10000 1 10 100 1000 -ic, collector current(ma) on voltage---(mv) vbeon@vce=-2v ta=-40c ta=0c ta=25c ta=75c ta=125c
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 5/8 BTB5240N3 cystek product specification typical characteristics(cont.) capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 -vr, reverse-biased voltage(v) capacitance---(pf) cib cob cutoff frequency vs collector current 10 100 1000 1 10 100 1000 -ic, collector current(ma) cutoff frequency---ft(mhz) vce=-10v power derating curve 0 50 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 175 ambient temperature---ta() power dissipation---pd(mw) see note 3 on page 1 see note 2 on page 1
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 6/8 BTB5240N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 7/8 BTB5240N3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c195n3 issued date : 2013.05.10 revised date : page no. : 8/8 BTB5240N3 cystek product specification sot-23 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. h j k d a l g v c b 3 2 1 s style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 3 2003, 4 2004 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 zf dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
